Advance Technical Information
HiperFET TM
Power MOSFETs
Q3-Class
IXFT15N100Q3
IXFH15N100Q3
V DSS
I D25
R DS(on)
t rr
= 1000V
= 15A
≤ 1.05 Ω
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1000
1000
± 30
± 40
V
V
V
V
TO-247 (IXFH)
I D25
I DM
I A
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
15
45
7.5
A
A
A
G
D
S
D (Tab)
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
1.0
50
690
J
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
-55 ... +150
° C
T JM
150
° C
Features
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
-55 ... +150
300
260
1.13 / 10
4.0
6.0
° C
° C
° C
Nm/lb.in.
g
g
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low R DS(on) and Q G
Advantages
High Power Density
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
BV DSS
V GS = 0V, I D = 1mA
1000
V
Applications
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.5
6.5 V
± 100 nA
25 μ A
1.5 mA
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
1.05
Ω
Temperature and Lighting Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS100353(06/11)
相关PDF资料
IXFT15N100Q MOSFET N-CH 1000V 15A TO-268
IXFT15N80Q MOSFET N-CH 800V 15A TO-268
IXFT16N80P MOSFET N-CH 800V 16A TO-268
IXFT17N80Q MOSFET N-CH 800V 17A TO-268(D3)
IXFT18N100Q3 MOSFET N-CH 1000V 18A TO-268
IXFT18N90P MOSFET N-CH 900V 18A TO268
IXFT20N60Q MOSFET N-CH 600V 20A TO-268
IXFT20N80P MOSFET N-CH 800V 20A TO-268
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